OLIVEIRA , Rosário

Ti–Si–C–ON films were deposited by DC reactive magnetron sputtering using different partial pressure ratio of oxygen (pO2) and nitrogen (pN2). Compositional analysis revealed the existence of three different growth zones for the films; (I) N/Ti = 2.1 (high atomic ratio) and low oxygen content; (II) 0.76 < N/Ti < 2.1 (intermediate atomic ratio)...

Ti–Si–C–ON films were deposited by DC reactive magnetron sputtering using different partial pressure of oxygen (pO2) and nitrogen (pN2) ratio. Compositional analysis revealed the existence of two different growth zones for the films; one zone deposited under low pO2/pN2 and another zone deposited under high pO2/pN2. The films produced under low...