PÉCZ , B.

Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 °C. The structure, phase and morphology were studied by cross-sectional transmission and scanning electron microscopy as well as by X-ray diffraction (XRD), the electrical behaviour by current–voltage measurements. It was obtained that annealing resulted in...

4H-SiC single crystalline substrates were implanted at room temperature with 150 keV Al+ ions using fluences of 4 1014, 1 1015, and 2 1015 cm−2 with current density of 2.5 A cm−2. The samples were subsequently annealed at 1100 °C in N2 for 1 h in order to analyze their structural recovery. The disorder induced in both sublattices by the Al+...

The integration of two-dimensional MoS2 with GaN recently attracted significant interest for future electronic/optoelectronic applications. However, the reported studies have been mainly carried out using heteroepitaxial GaN templates on sapphire substrates, whereas the growth of MoS2 on low-dislocation-density bulk GaN can be strategic for the...