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2013 (v1)Conference paperUploaded on: December 4, 2022
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April 7, 2014 (v1)Journal article
We report on room temperature electrically-induced terahertz emission from interdigitated GaN quantum well structures. The emission spectrum has been analysed in a Michelson interferometer using a 4K-Si bolometer as a terahertz detector. A resonant peak at the frequency of around 3 THz was observed in emission spectra. A threshold behaviour of...
Uploaded on: February 28, 2023 -
2013 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
2011 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
January 25, 2012 (v1)Conference paper
We report on measurements of radiation transmission in the 0.220-0.325 THz and 0.75-1.1 THz frequency ranges through GaN quantum wells grown on sapphire substrates at nitrogen and room temperatures. Significant enhancement of the transmitted beam intensity with applied voltage is found at nitrogen temperature. This effect is explained by...
Uploaded on: December 4, 2022 -
2013 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
2011 (v1)Conference paper
International audience
Uploaded on: December 4, 2022