PERNOT , Julien

The rapidly increasing power demand, downsizing of power electronics and material specific limitation of silicon has led to development of AlGaN/GaN heterostructures. Commercial GaN power devices are best available for radio frequency (RF) and high voltage switching applications. Emerging Al x Ga 1-x N channel based heterostructures are...

In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral breakdown voltage above 10 kV was observed on the thin channel structure for large contact distances. Also, the...

The rapidly increasing power demand, downsizing of power electronics and material specific performance limitation of silicon has led to the development of AlGaN/GaN heterostructures for high power applications. In this frame, emerging AlxGa1-xN channel based heterostructures show promising features for next generation of power electronics. In...

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Abstract Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required. More than AlGaN/GaN heterostructures, AlGaN/AlGaN heterostructures are promising candidates to meet these criteria....