POIRIER , W.

A few years ago, we demonstrated that graphene can markedly surpass GaAs/AlGaAs semiconductor heterostructures for the implementation of the quantum Hall resistance standard in relaxed experimental conditions, while preserving a state-of-the-art accuracy [1]. This paper describes supplementary quantum transport experiments performed on a...

We report on measurements in large quantum Hall devices, made of high-quality graphene grown by propane/hydrogen chemical vapor deposition on SiC. These devices, having all the properties of an ideal quantum electrical resistance standard, surpass state-of-the-art GaAs/AlGaAs devices by considerable margins in their operational conditions. The...

We report on measurements in large quantum Hall devices, made of high-quality graphene grown by propane/hydrogen chemical vapor deposition on SiC. These devices, having all the properties of an ideal quantum electrical resistance standard, surpass state-of-the-art GaAs/AlGaAs devices by considerable margins in their operational conditions. The...

International audience

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10(-9) in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher...