Nitride based materials are present in everyday life for optoelectronic applications (light emitting diodes, lasers). GaN remarkable properties (like large energy band gap, high breakdown electric field, high polarization field, high electronic saturation velocity…) make it a promising candidate for low frequency power electronic applications,...
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December 13, 2013 (v1)PublicationUploaded on: October 11, 2023
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May 21, 2023 (v1)Conference paper
In this paper, a performance comparison between sub-micron thick AlGaN/GaN and AlN/GaN HEMT devices are reported. Various gate lengths have been employed in order to analyze the impact on DC and RF performances. Electrical characteristics of these structures for 100 nm gate length show a higher maximum drain current, extrinsic transconductance...
Uploaded on: February 11, 2024 -
2023 (v1)Journal article
We report on a sub-micron thick AlGaN/GaN high electron mobility transistor (HEMT) epilayers grown on silicon substrate with a state-of-the art vertical buffer breakdown field as high as 6 MV/cm enabling a high transistor breakdown voltage of 250 V for short gate to drain distances despite such a thin structure. HEMTs with a gate length of 100...
Uploaded on: March 25, 2023 -
July 6, 2023 (v1)Journal article
In this work, sub-micron-thick AlN/GaN transistors (HEMTs) grown on a silicon substrate for high-frequency power applications are reported. Using molecular beam epitaxy, an innovative ultrathin step-graded buffer with a total stack thickness of 450 nm enables one to combine an excellent electron confinement, as reflected by the low...
Uploaded on: September 5, 2023 -
November 12, 2023 (v1)Conference paper
ED11-2 (Oral)PRICE: BEST STUDENT AWARD
Uploaded on: January 19, 2024 -
July 4, 2017 (v1)Conference paper
Grâce à une nouvelle combinaison des modes de croissances EJM et MOCVD nous avons réalisés des guides d'onde à base d'AlN et de GaN mono-cristalins sur saphir qui présentent de très faibles pertes à la propagation. Nous avons pu démontrer que ces guides ont des possibilités très intéressantes de doublage de fréquence dans le proche IR et le...
Uploaded on: February 28, 2023 -
May 2018 (v1)Journal article
International audience
Uploaded on: December 4, 2022 -
May 3, 2018 (v1)Publication
En combinant EJM et EPVOM nous avons réalisés des guides d'onde à base d'AlN et de GaN mono-cristallins qui présentent de très faibles pertes à la propagation et des possibilités d'accord de phase modal intéressantes. A partir de ces structures, nous avons réalisés des guides canaux dont nous présentons les performances linéaires et non...
Uploaded on: December 4, 2022 -
2013 (v1)Conference paper
No description
Uploaded on: October 11, 2023 -
November 2022 (v1)Journal article
(111)-oriented cubic polytypes of silicon carbide (3C-SiC) films were grown by chemical vapor deposition on 2H-AlN(0001)/Si(111) and 2H-AlN(0001)/Si(110) templates. The structural and electrical properties of the films were investigated. For film thicknesses below 300 nm, the 3C-SiC material deposited on 2H-AlN/Si presented a better structural...
Uploaded on: October 15, 2023 -
2017 (v1)Journal article
International audience
Uploaded on: February 28, 2023 -
2013 (v1)Conference paper
No description
Uploaded on: December 3, 2022 -
2013 (v1)Conference paper
No description
Uploaded on: December 3, 2022 -
2013 (v1)Conference paper
No description
Uploaded on: October 11, 2023 -
May 2018 (v1)Journal article
International audience
Uploaded on: December 4, 2022 -
July 3, 2023 (v1)Conference paper
National audience
Uploaded on: October 11, 2023 -
October 28, 2022 (v1)Journal article
In the first part of this paper, we present a model that explains and determines quantitatively the twists between nucleation islands in the case of a Volmer–Weber heteroepitaxial growth of tetrahedrally coordinated semiconductors along hexagonal orientations. These twists are caused by the network of the screw components of the 60° misfit...
Uploaded on: February 22, 2023 -
June 18, 2024 (v1)Journal article
Abstract Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required. More than AlGaN/GaN heterostructures, AlGaN/AlGaN heterostructures are promising candidates to meet these criteria....
Uploaded on: August 2, 2024 -
2019 (v1)Journal article
Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the...
Uploaded on: December 4, 2022 -
2016 (v1)Journal article
no abstract
Uploaded on: February 28, 2023