March 30, 2007 (v1)
Journal article
The photoluminescence (PL) properties of InAs/(Ga,In)(N,As) quantum dots (QDs) were analyzed and compared to those of InAs/(Ga,In)As QDs. While the PL intensity and the PL decay times of these samples are similar at low temperature, their decrease when the temperature increases is stronger in the case of InAs/(Ga,In)(N,As) QDs. This is...
Uploaded on: February 28, 2023