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May 26, 2022 (v1)Journal articleUploaded on: December 3, 2022
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November 13, 2020 (v1)Journal article
A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam epitaxy on a heavily Mg-doped p-type GaN thin layer, grown by metalorganic vapor phase epitaxy. A correlation of atom...
Uploaded on: December 4, 2022 -
November 13, 2020 (v1)Journal article
International audience
Uploaded on: February 22, 2023 -
November 13, 2020 (v1)Journal article
A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam epitaxy on a heavily Mg p-type GaN thin layer, grown by metalorganic vapor phase epitaxy. A correlation of atom probe...
Uploaded on: December 4, 2022 -
2020 (v1)Journal article
Laser enhanced field evaporation of surface atoms in Laser-assisted Atom Probe Tomography (La-APT) can simultaneously excite phtotoluminescence in semiconductor or insulating specimens. An atom probe equipped with appropriate focalization and collection optics has been coupled with an in-situ micro-Photoluminescence (µPL) bench that can be...
Uploaded on: December 4, 2022