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ROBERT , E. V. C.

Last name: ROBERT

First name: E. V. C.

2016 (v1)

Publication

Metadata-only

Crystallographic and optoelectronic properties of the novel thin film absorber Cu2GeS3

Robert, E. V. C. De Wild, J. Colombara, D.

Thin films of Cu2GeS3 are grown by annealing copper layers in GeS and S gaseous atmosphere above 460°C. Below 500°C the cubic polymorph is formed, having inferior optoelectronic properties compared to the monoclinic phase, formed at higher temperature. The bandgap of the cubic phase lies below that of the monoclinic phase: they are determined...

Uploaded on: April 14, 2023