ROTELLA , Hélène

Due to its large piezoelectric and spontaneous polarization coefficients combined with the possibility of being grown lattice-matched with GaN, wide bandgap ScAlN is becoming a promising material in III-nitride semiconductor technology. In this work, and for the first time, ScAlN growth has been performed by molecular beam epitaxy with ammonia...

The properties of ScAlN layers grown by molecular beam epitaxy have been carefully studied using atom probe tomography (APT) and complementary techniques. The measured III-site fraction within the ScxAl1−xN layer is x = 0.16 ± 0.02, in good agreement with the values determined by x-ray photoelectron spectroscopy (XPS, x = 0.14) and secondary...