GaN and its related alloys constitute a family of wide bandgap semiconductors suitable to optoelectronics and power microwave applications. For the latter applications, their high breakdown fields in the 3MV/cm range and their high peak electron velocity above 107cm/s are crucial. The high electron mobility transistor (HEMT) based on GaN is...
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October 11, 2004 (v1)Conference paperUploaded on: February 28, 2023
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May 2020 (v1)Journal article
Transfer technology is now becoming very attractive not only for new technologies such as flexible technology but also for solid state technologies when performances are limited by technological barriers that have to be overcome. In this last context, the transfer of high electron mobility transistors (HEMTs) on diamond substrates represents an...
Uploaded on: December 4, 2022