SELLES , Julien

Self-assembled semiconductors QDs are of great interest in fundamental physics as well as inapplied physics. In GaN/AlN heterostructures, the huge band-offset and the strong excitonicbinding lead to an important exciton confinement allowing an emission even at roomtemperature. GaN QDs grown along the (1000) axis are named "polar" due to their...

Properties of self-assembled quantum dots (QDs), often referred to as artificial atoms in solid state, are very interesting in order to study physical effects specific to single quantum systems such as the single-photon emission. Thanks to their huge vertical quantum confinement, GaN QDs are emitting even at room temperature and on a large UV...

Properties of self-assembled quantum dots (QDs), often referred to as artificial atoms in solid state, are very interesting in order to study physical effects specific to single quantum systems such as the single-photon emission. Thanks to their huge vertical quantum confinement, GaN QDs are emitting even at room temperature and on a large UV...

GaN-Al0.5NGa0.5N quantum dots deposited on (11-22) planes have been grown by combining Molecular Beam Epitaxy and Metal Organic Vapour Phase Epitaxy. This combination is interesting for realization of ultraviolet operation light emitting diodes, lasers andsingle photon sources,… (1,3) The growth of dots was achieved by MBE using ammonia as...

Deep ultra-violet semiconductor lasers have numerous applications for optical storage, biochemistry or optical interconnects. UV-emitting ridge lasers usually embed nitride heterostructures grown on complex buffer layers or expensive substrates – an approach that cannot be extended to nano-photonics and microlasers. We demonstrate here the...

The development of semiconductor lasers in the deep ultra-violet (UV) spectral range is attracting a strong interest, related to their multiple applications for optical storage, biochemistry or optical interconnects. UV-emitting ridge lasers usually embed nitride heterostructures grown on complex buffer layers or expensive substrates – an...

Deep ultra-violet semiconductor lasers have numerous applications for optical storage and biochemistry. Many strategies based on nitride heterostructures and adapted substrates have been investigated to develop efficient active layers in this spectral range, starting with AlGaN quantum wells on AlN substrates and more recently sapphire and SiC...

Dans le domaine de la nano-photonique, les matériaux semiconducteurs nitrures (GaN, AlN) présentent un intérêt grandissant en raison de leurs spécificités, et de leur complémentarité avec les filières déjà établies. Ces matériaux présentent en effet une plage de transparence large, du moyen infra-rouge à l'ultra-violet ; ils présentent aussi...

We present a series of microdisk lasers realized within the same GaN-on-Si photonic platform scheme, and operating at room temperature under pulsed optical pumping over a broad spectral range extending over λ = 275 nm–470 nm. The III-nitride microdisks embed either binary GaN/AlN multiple quantum wells (MQWs) for UV operation, or ternary...