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SINGH , Rashmi

Last name: SINGH

First name: Rashmi

2024 (v1)

Journal article

Metadata-only

Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates

Kumari, Shikha Singh, Rashmi Kumar, Shivam

The forward and reverse current transport mechanisms, temperature dependence of Schottky barrier height (SBH) and ideality factor, barrier inhomogeneity analysis, and trap parameters for Schottky barrier diodes (SBDs) fabricated on 4H-SiC, GaN-on-GaN and AlGaN/GaN epitaxial substrates are reported. High SBH is identified for Ni/4H-SiC (1.31 eV)...

Uploaded on: October 11, 2024