TAINOFF , Dimitri

Deep level transient spectroscopy of both majority and minority carrier traps is performed in a n-type, nitrogen doped homoepitaxial ZnO layer grown on a m-plane by molecular beam epitaxy. Deep levels, most of them being not detected in undoped ZnO, lie close to the band edges with ionization energies in the range 0.12-0.60 eV. The two hole...

We report growth of high quality ZnO/Zn0.8Mg0.2O quantum well on M-plane oriented ZnO substrates. The optical properties of these quantum wells are studied by using reflectance spectroscopy. The optical spectra reveal strong in-plane optical anisotropies, as predicted by group theory, and marked reflectance structures, as an evidence of good...

Photoluminescence spectra of nonpolar M-plane ZnO/Zn0.8Mg0.2O quantum wells exhibit strong excitonic peaks from low (10 K) to high (325 K) temperatures. We find that the total integrated intensity remains quasiconstant and that the exciton lifetime increases linearly with the temperature from a value of 750 ps at 100 K until about 2.4 ns at 325...