Absorber layers consisting of Cu2ZnSnSe4 (CZTSe) and surface ZnSe in variable ratios were prepared by selenization of electroplated Cu/Sn/Zn precursors and completed into full devices with up to 5.6% power conversion efficiency. The loss of short circuit current density for samples with increasing ZnSe content is consistent with an overall...
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2014 (v1)PublicationUploaded on: April 14, 2023
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2014 (v1)Publication
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Uploaded on: April 14, 2023 -
August 2019 (v1)Journal article
We investigated the electrical and optical performances of semipolar (11-22) InGaN green µLEDs with a size ranging from 20 × 20 µm 2 to 100 × 100 µm 2 , grown on a low defect density and large area (11-22) GaN template on patterned sapphire substrate. Atom probe tomography (APT) gave insights on quantum wells (QWs) thickness and indium...
Uploaded on: December 4, 2022