TINJOD , F.

A new substrate material, alumina-rich spinel, with better thermal and lattice match to GaN than sapphire, has been developed for growing high-quality GaN-based light-emitting diodes (LEDs). As 1:3 spinel (1 MgO for 3 Al2O3), MgAl6O10, is chemically close to sapphire, Al2O3, we successfully replicated on (1 1 1)-oriented spinel wafers the GaN...