The relaxation mechanisms in metal-organic vapor phase epitaxy grown (Al,Ga)N∕GaN heterostructures are studied. The first stage of the relaxation process is a two-dimensional–three-dimensional growth transition with the formation of mesalike islands separated by V-shaped trenches. The tensile stress relief is obtained by an elastic relaxation...
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January 15, 2005 (v1)Journal articleUploaded on: December 4, 2022
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December 2005 (v1)Journal article
A new substrate material, alumina-rich spinel, with better thermal and lattice match to GaN than sapphire, has been developed for growing high-quality GaN-based light-emitting diodes (LEDs). As 1:3 spinel (1 MgO for 3 Al2O3), MgAl6O10, is chemically close to sapphire, Al2O3, we successfully replicated on (1 1 1)-oriented spinel wafers the GaN...
Uploaded on: December 4, 2022