October 10, 2024 (v1)
Publication
This paper presents a BiCMOS low-noise amplifier (LNA) operating at G-band (140 to 220 GHz) that is robust against harsh operation conditions, namely large temperature variations and radiation exposure. A SiGe technology (IHP's 0.13- μ m SG13G2) has been used for the amplifier design, due to its suitability for millimeter wave (mmW) frequencies...
Uploaded on: October 11, 2024