Al/CuO energetic structure are attractive materials due to their high thermal output and propensity to produce gas. They are widely used to bond components or as next generation of MEMS igniters. In such systems, the reaction process is largely dominated by the outward migration of oxygen atoms from the CuO matrix toward the aluminum layers,...
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October 17, 2017 (v1)Journal articleUploaded on: December 4, 2022
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February 2019 (v1)Journal article
Down converter SiN x :Yb 3+ /SiN x :Tb 3+ multilayers are deposited by reactive magnetron cosputtering with the objective of optimizing the interaction distance betweenTb 3+ and Yb 3+ ions to favor a better light management in Si solar cells. Those Si‐based multilayers are developed to be compatible with the Si photovoltaic technology. The...
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March 26, 2023 (v1)Conference paper
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August 7, 2017 (v1)Conference paper
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June 18, 2018 (v1)Conference paper
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July 29, 2018 (v1)Conference paper
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February 17, 2019 (v1)Conference paper
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June 12, 2018 (v1)Journal article
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically resolved microscopy shows that monodomain three-dimensional islands are observed at the early stages of AlSb, AlN, and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si...
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September 2, 2018 (v1)Conference paper
In this work, we experimentally and theoretically clarify the III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at theearly stages of AlSb, AlN and GaP molecular beam epitaxy on Si, independently of strain. It is also shown that complete III-V/Si wetting cannot be achieved in most...
Uploaded on: December 4, 2022