July 28, 2022 (v1)
Journal article
A model to predict the ideal reverse leakage currents in Schottky barrier diodes, namely, thermionic emission and tunneling components, has been developed and tested by means of current–voltage–temperature measurements in GaN-on-SiC devices. The model addresses both current components and both forward and reverse polarities in a unified way and...
Uploaded on: December 3, 2022