VAURETTE , Francois

Last name: VAURETTE

First name: Francois

July 5, 2023 (v1)

Conference paper

Metadata-only

Selective area growth of P-GaN by MBE for the fabrication of AlGaN/GaN normally-off HEMTs

Rouly, Daniel Tasselli, Josiane Austin, Patrick

The technology of GaN HEMT structures is the subject of major developments for large-gap power components. However, it is necessary to develop innovative technological solutions to obtain high-performance normally-off devices. We present a new normally-off structure based on a nanostructured P-GaN multi-well gate. The design of this structure,...

Uploaded on: June 16, 2023
September 19, 2022 (v1)

Conference paper

Metadata-only

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Lesecq, Marie Fouzi, Y. Abboud, A.

International audience

Uploaded on: March 25, 2023
May 2023 (v1)

Journal article

Metadata-only

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Lesecq, Marie Fouzi, Yassine Abboud, Ali

ABSTRACT In this paper, non-alloyed ohmic contacts regrown by molecular beam epitaxy (MBE) are fabricated on AlGaN/ GaN high-electron-mobility transistors on 6H-SiC substrate. Low ohmic contact resistance of 0.13 Ω.mm is obtained. This paper demonstrates the high frequency and high power performance improvements thanks to this technology...

Uploaded on: April 30, 2023
2012 (v1)

Conference paper

Metadata-only

GaN MEMS resonators : from demonstration to microsystem-compatible performances

Faucher, Marc Ben Amar, Achraf Zhang, Victor

International audience

Uploaded on: December 3, 2022

VAURETTE , Francois

Recent uploads