VENTURINI G.

The magnetisation and the magnetoresistance of the LuMn6Ge6-xGax compounds (x=0.2, 0.4, 0.6) at 10 and 295 K in applied magnetic fields up to 9 T is presented. The partial substitution of Ga for Ge leads to a large and significant increase of the c/a ratio with different changes in Mn-Mn distances. Rather large negative values of...

Polycrystalline samples of HfFe6Ge6-type LuMn6Sn6-xInx compounds (0.08less than or equal toxless than or equal to0.48) have been studied by magnetisation, a.c. susceptibility and magnetoresistance measurements. The compounds order antiferromagnetically between T-N=391 K for x=0.08 to T-N=313 K for x=0.48. Field dependence of the magnetisation...