WALLART , X.

AbstractQuasi-vertical gallium nitride (GaN) Schottky diodes on silicon carbide (SiC) substrates were fabricated for frequency multiplier applications. The epitaxial structure employed had an n− layer of 590 nm with doping 6.6 × 1016 cm−3, while the n+ layer was 950 nm thick, with doping 2 × 1019 cm−3. Potassium hydroxide (KOH) chemical surface...

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Résultats Préliminaires : Oscillateur Micro-Onde à THz Ultra-Stable

Institute of Electrical and Electronics Engineers-Ultrasonics, Ferroelectrics and Frequency Control Society

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Institute of Electrical and Electronics Engineers-Ultrasonics, Ferroelectrics and Frequency Control Society

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