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Last name: WROBEL
First name: Frédéric
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The aim of this work is to show the contribution of nuclear events occurring with oxygen nuclei in SRAM-oxide such as SiO2 and emphasize that they are likely to increase the soft error rate by about several tens of percent. Recoil energies are calculated with a dedicated subroutine, which accounts for elastic and nonelastic reactions in the...
Chemical Vapor Deposited (CVD) diamond is a very promising material extensively studied in many technologies. Thermoluminescence (TSL) experiments demonstrate that important thermal quenching phenomenon occurs with microwave plasma chemical vapour deposited (MWCVD) diamond. This phenomenon leads to a large discrepancy on the determination of...
The effect of different rates of boron incorporation during the growth in diamond on the thermoluminescence (TL) features of this material is investigated. TL studies performed between liquid nitrogen temperature (LNT) and 320 K show some phosphorescence and two other peaks at 226 and 266 K. For the first time, boron level in polycrystalline...
Chemical Vapor Deposited (CVD) diamond has great advantages for use as thermoluminescent dosimeters in radiotherapy environment because of the reproducible high quality and controlled doping. This study compares CVD diamond Thermally Stimulated Luminescence response to that of a classical ionization chamber. Clinically-relevant features like...
Chemical Vapor Deposited (CVD) diamond has great advantages for use as thermoluminescent dosimeters in radiotherapy environment because of the reproducible high quality and controlled doping. This study compares CVD diamond Thermally Stimulated Luminescence response to that of a classical ionization chamber. Clinically-relevant features like...
International audience
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This paper presents a new 3D methodology to simulate Multiple Bit Upsets in commercial SRAMs. Experiments are performed at the Los Alamos neutron facility on 90, 130, and 250 nm SRAMs and compared to Monte-Carlo simulations. A discussion on ions inducing MBUs is also proposed.
This paper presents a new 3D methodology to simulate Multiple Bit Upsets in commercial SRAMs. Experiments are performed at the Los Alamos neutron facility on 90, 130, and 250 nm SRAMs and compared to Monte-Carlo simulations. A discussion on ions inducing MBUs is also proposed.
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A Monte Carlo approach is used to obtain statistical information on the effect of the spatial distribution of the numerous secondary ions involved in neutron induced soft error rates (SER). The sorting criteria for the occurrence of upset are derived from a simplification of previous work on full-cell three-dimensional (3-D) SRAM device...
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This paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in complementary metal oxide semiconductor (CMOS) logic circuits: TMC DASIE (transient Monte-Carlo detailed analysis of secondary ion effects). The production and effects of single-event transients inside CMOS combinational logic gates are examined....
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The aim of this work is to validate experimentally the results of the Monte Carlo Recoil Energy Determination (MC-RED) nuclear physics code used to determine the deposited energy in a silicon volume taking into account the probabilistic approach of the physical phenomenon. A silicon sensor has been used to measure the deposited energy spectrum...
This paper investigates the sensitivity of SOI and Bulk SRAMs to neutron irradiations with energies from 14 to 500 MeV. The technology sensitivity is analyzed with both experiments and Monte Carlo simulations. In particular, simulations include the nuclear interactions of neutrons with both silicon and oxygen nuclei (n-Si and n-O), in order to...