ZAITER , Aly

This research project encompasses the epitaxial growth of (Al, Ga)N coupled with innovative approaches such as high-temperature annealing and growth on 2D materials, aimed at improving the quality of heterostructures for efficient light-emitting diodes (LEDs) emitting in the ultra-violet (UV) range.The investigation commences with an in-depth...

Aluminium Gallium Nitride (Al y Ga 1-y N) quantum dots (QDs) with thin sub-µm Al x Ga 1-x N layers (with x > y) were grown by molecular beam epitaxy on 3 nm and 6 nm thick hexagonal boron nitride (h-BN) initially deposited on c-sapphire substrates. An AlN layer was grown on h-BN and the surface roughness was investigated by atomic force...

In this study, AlN epilayers were grown by ammonia-assisted molecular beam epitaxy on 3 nm h-BN grown on c-sapphire substrates. Their structural properties were investigated by comparing as-grown and postgrowth annealed layers. The role of annealing on the crystalline quality and surface morphology was studied as a function of AlN thickness and...

The luminescence efficiency of AlxGa1−xN quantum dots (QDs) and quantum wells (QWs), buried in AlN cladding layers and emitting in the ultraviolet range between 234 and 310 nm, has been investigated. The growth and optical properties have been done using similar aluminum composition (varying from 0.4 to 0.75) for both QDs and QWs. In order to...

Deep ultraviolet (DUV) light emitting diodes (LED) are expected to be the next generation of UV sources, offering significant advantages such as compactness, low consumption and long lifetimes. Yet, improvements of their performances are still required and the potential of AlyGa1-yN quantum dots as DUV emitters is investigated in this study....