ZEROUNIAN , Nicolas

Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at. % Sn, which is an indirect band-gap semiconductor as-grown, is transformed via tensile strain engineering...