We investigate the proton energy loss in GaN in an energy range between 0 and 65 MeV. The energy of protons generated by a cyclotron at about 65 MeV is varied by inserting an energyabsorbing medium of varying thickness. The precise modeling of the GaN Schottky diode response as a function of the absorbing medium thickness allows us to...
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August 2021 (v1)Journal articleUploaded on: December 4, 2022
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August 2021 (v1)Journal article
We investigate the proton energy loss in GaN in an energy range between 0 and 65 MeV. The energy of protons generated by a cyclotron at about 65 MeV is varied by inserting an energy- absorbing medium of varying thickness. The precise modeling of the GaN Schottky diode response as a function of the absorbing medium thickness allows us to...
Uploaded on: December 4, 2022