Power Dissipation Associated to Internal Effect Transitions in Static CMOS Gates

Description

Power modeling techniques have traditionally neglected the main part of the energy consumed in the internal nodes of static CMOS gates: the power dissipated by input transitions that do not produce output switching. In this work, we present an experimental set-up that shows that this power component may contribute up to 59% of the total power consumption of a gate in modern technologies. This fact makes very important to include it into any accurate power model

Abstract

Ministerio de Educación y Ciencia HYPER MIC TEC2007-61802

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