Published January 24, 2017 | Version v1
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Power Dissipation Associated to Internal Effect Transitions in Static CMOS Gates

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Description

Power modeling techniques have traditionally neglected the main part of the energy consumed in the internal nodes of static CMOS gates: the power dissipated by input transitions that do not produce output switching. In this work, we present an experimental set-up that shows that this power component may contribute up to 59% of the total power consumption of a gate in modern technologies. This fact makes very important to include it into any accurate power model

Abstract

Ministerio de Educación y Ciencia HYPER MIC TEC2007-61802

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URL
https://idus.us.es/handle/11441/52628
URN
urn:oai:idus.us.es:11441/52628

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