Published 1981
| Version v1
Publication
CAD Model for Threshold and Subthreshold Conduction in Short channel MOSFET's
Creators
Contributors
Description
In this work we propose a simple model for the operation of the short channel MOSFET in weak and strong inversion. This model shows a better agreement to experimental data than previous models and is well suited for use in circuit simulation programs.
Additional details
Identifiers
- URL
- http://hdl.handle.net/11567/201487
- URN
- urn:oai:iris.unige.it:11567/201487
Origin repository
- Origin repository
- UNIGE