Strain and microstructure in Fe-doped GaN layers grown by low pressure metalorganic vapour phase epitaxy

Creators: Azize, M.; Leroux, M.; Laügt, M.; Gibart, P.; Bougrioua, Z.

Others:: Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA); Saint-Gobain (LUMILOG) ; SAINT-GOBAIN LUMILOG; Institut d'Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN) ; Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Description

In order to get semi‐insulating GaN layers with a low dislocation density on sapphire, two kinds of Fe doping were explored by low pressure metalorganic vapour phase epitaxy (LP‐MOVPE): the modulation doping (MD) and the continuous doping (CD). The high crystalline quality and the semi‐insulating character are obtained in the case of the Fe‐MD layers. The effect of Fe doping on the strain was investigated in both kind of layers (MD and CD) by X‐ray diffraction, photoluminescence and reflectivity. The lattice parameters are functions of the iron doping level, whatever the doping mode.

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Strain and microstructure in Fe-doped GaN layers grown by low pressure metalorganic vapour phase epitaxy

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