Published 2012
| Version v1
Conference paper
Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)
- Others:
- Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
- Laboratoire Charles Coulomb (L2C) ; Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
- Institut de Recherche en Communications et en Cybernétique de Nantes (IRCCyN) ; Mines Nantes (Mines Nantes)-École Centrale de Nantes (ECN)-Ecole Polytechnique de l'Université de Nantes (EPUN) ; Université de Nantes (UN)-Université de Nantes (UN)-PRES Université Nantes Angers Le Mans (UNAM)-Centre National de la Recherche Scientifique (CNRS)
- NOVASiC, Savoie Technolac ; NOVASiC, Savoie Technolac
- Devaty
- RP and Dudley
- M and Chow
- TP and Neudeck
- PG
Description
We have grown graphene on SiC(0001) using propane-hydrogen CVD. In this work, we present the effects of growth pressure and temperature on structural and electrical properties. Structural characterizations evidence the formation of graphene with in-plane rotational disorder, except for low growth pressure and high growth temperature which lead to the formation of a (6 root 3x6 root 3)-30 degrees interface between graphene and SiC. Electrical properties of samples presenting different graphene/SiC stacking and interfaces are compared and discussed.
Abstract
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), Cleveland, OH, SEP 11-16, 2011
Abstract
International audience
Additional details
- URL
- https://hal.archives-ouvertes.fr/hal-03037521
- URN
- urn:oai:HAL:hal-03037521v1
- Origin repository
- UNICA