Experimental setup for non-destructive measurement of tunneling currents in semiconductor devices

Description

A new experimental setup used to perform non-destructive measurement of electrical quantities on semiconductor devices is described in this paper. The particular case of tunneling current measurement in n-type semiconductor–oxide–semiconductor (SOS) capacitors, whose dielectrics play a crucial role in non-volatile memories, has been investigated. When the gates of such devices are polarized with a sufficient bias voltage while the other terminals are grounded, tunnel conduction of electrons through the thin oxide layer is allowed. Typical tunneling current measurements obtained with this advanced setup are presented and compared to the results yielded by older standard experimental protocols. An application to the experimental observation of the temperature dependence of the tunneling current is proposed. Conclusions about the benefits of this kind of electrical measurements are then drawn.

Abstract

International audience

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