Published February 17, 2014
| Version v1
Journal article
Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition
Contributors
Others:
- Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
- Laboratoire Charles Coulomb (L2C) ; Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Description
While the integration of graphene on semiconductor surfaces is important to develop new applications, epitaxial graphene has only been integrated on SiC substrates or 3C-SiC/Si templates. In this work, we explore the possibility of growing graphene on AlN/Si(111) templates. Using a chemical vapor deposition process with propane as the carbon source, we have obtained graphitic films (from 2 to 10 graphene layers) on AlN/Si(111) while preserving the morphology of the AlN layer beneath the graphitic film. This study is an important step for the integration of graphene with semiconductors other than SiC.
Additional details
Identifiers
- URL
- https://hal.science/hal-01200742
- URN
- urn:oai:HAL:hal-01200742v1
Origin repository
- Origin repository
- UNICA