Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate

Description

Among the different silicon carbide polytypes, 3C–SiC is very interesting for Micro-Electro-MechanicalSystems (MEMS) applications. This interest could benefit from the development of multi stacked Si/SiC heterostructures as illustrated by the achievement of a continuous silicon monocrystalline thin film on 3C–SiC epilayers deposited on (1 0 0) silicon substrates. Based on this recent result, an original monocrystalline 3C–SiC/Si/3C-SiC/Si hetero-structure has been developed by Low Pressure Chemical Vapor Deposition with a two-step process. This kind of structure allows the selective etching of the silicon epilayer in order to define an original 3C–SiC micro-structure. By wet etching, the remaining silicon film, used as a sacrificial layer, can be then etched, resulting in a monocrystalline 3C-SiC membrane on a 3C-SiC pseudosubstrate. This new and original approach opens the field for future MEMS devices.

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