Published January 23, 2011 | Version v1
Conference paper Metadata-only

Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

Faucher, Marc
Cordier, Yvon
Semond, Fabrice
Brandli, Virginie
Grimbert, Bertrand
Ben Amar, Achraf
Werquin, Matthieu
Boyaval, Christophe
Gaquière, Christophe
Theron, Didier
Buchaillot, Lionel
Others:
Institut d'Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN) ; Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)

Description

The properties of a new class of electromechanical resonators based on GaN are presented. By using the two-dimensional electron gas (2-DEG) present at the AlGaN/GaN interface and the piezoelectric properties of this heterostructure, we use the R-HEMT (Resonant High Electron Mobility Transistor) as an active piezoelectric transducer up to 5MHz. In addition to the amplification effect of piezoelectric detection, we show that the active piezoelectric transduction has a strong dependence with the channel mobility that is controlled by a top gate. This allows to envision highly tunable sensors with co-integrated HEMT electronics.

Abstract

International audience

Additional details

Identifiers Origin repository
Created:
December 3, 2022
Modified:
November 30, 2023