Published March 12, 2001
| Version v1
Journal article
Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes.
Contributors
Others:
- Groupe d'étude des semiconducteurs (GES) ; Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)
- Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
- Actions Concertées Incitatives du MENRT "BOQUANI" et "NANILUB".
- European Project: HPRN-CT-1999- 00132,CLERMONT
Description
We compare several InGaN-based low-dimensional systems, by time-resolved photoluminescence (PL), versus temperature (8
Abstract
International audienceAdditional details
Identifiers
- URL
- https://hal.science/hal-01303205
- URN
- urn:oai:HAL:hal-01303205v1
Origin repository
- Origin repository
- UNICA