Efficient realization of RTD-CMOS logic gates

Description

The incorporation of Resonant Tunnel Diodes (RTDs) into III/V transistor technologies has shown an improved circuit performance: higher circuit speed, reduced component count, and/or lowered power consumption. Currently, the incorporation of these devices into CMOS technologies (RTD-CMOS) is an area of active research. Although some works have focused the evaluation of the advantages of this incorporation, additional work in this direction is required. This paper compares RTD-CMOS and pure CMOS realizations of a set of logic gates which can be operated in a gate-level nanopipelined. Lower average power and energy per cycle are obtained for RTD/CMOS implementations.

Abstract

Spanish Ministry of Education and Science with support from ERDF under Project TEC2007- 67245

Abstract

Consejería de Innovación, Ciencia y Empresa, Junta de Andalucía under Project TIC-2961

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