Impact of Substrate Quality on Vertical GaN-on-GaN Schottky and PiN Devices

Description

In recent years, vertical GaN-on-GaN devices have emerged as potential substitutes for conventional lateral power devices like GaN-on-Si, GaN-on-Sapphire and SiC devices. This promise is due to the vertical structure that offers a pathway to higher breakdown voltages and lower on-resistance allowing to fully benefit of the superior properties of GaN such as wide bandgap, high electron mobility, high critical field breakdown. Despite this potential, these devices face some challenges in terms of material quality, mainly structural defects which affects their electrical performance reliability, and overall efficiency.

Abstract

International audience

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