Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation

Description

Porous GaN and (Ga,In)N/GaN single quantum well layers are fabricated using a selective area sublimation (SAS) technique from initially smooth and compact 2-dimensional (D) layers grown on Si(111) or c-plane sapphire substrates. The photoluminescence properties of these porous layers are measured and compared to reference non-porous samples. Whatever the substrate used, the porosity leads to an increase of the room temperature photoluminescence intensity. The magnitude of this increase is related to the initial defect density of the 2D epitaxial layers and to the degree of carrier localization prior to the SAS process.

Abstract

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