Two-dimensional "pseudo-donor–acceptor-pairs" model of recombination dynamics in InGaN/GaN quantum wells

Creators: Morel, Aurélien; Lefebvre, Pierre; Taliercio, Thierry; Gil, Bernard; Grandjean, Nicolas; Damilano, Benjamin; Massies, Jean

Others:: Groupe d'étude des semiconducteurs (GES) ; Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS); Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA); Actions Concertées Incitatives (ACI) Nanosciences du MENRT "NANILUB", "INTRANIT" et "BOQUANI".; Xavier Marie; Thierry Amand; Chantal Fontaine; Jesse Groenen; Adnen Mlayah; European Project: HPRN-CT-1999- 00132,CLERMONT

Description

Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dynamics of two dimensional "pseudo-donor–acceptor pairs".

Abstract

International audience

Two-dimensional "pseudo-donor–acceptor-pairs" model of recombination dynamics in InGaN/GaN quantum wells

Description

Abstract

Additional details