Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Creators: Cordier, Yvon; Semond, Fabrice; Moreno, Jean-Christophe; Frayssinet, Éric; Benbakhti, Brahim; Cao, Z.; Chenot, Sébastien; Nguyen, Lee; Tottereau, Olivier; Soltani, Ali; Blary, Karine

Others:: Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA); Institut d'Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN) ; Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

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In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.

Abstract

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Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

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