Published May 25, 2003
| Version v1
Publication
Optical properties of GaN/AlN quantum boxes under high photo-excitation
Contributors
Others:
- Groupe d'étude des semiconducteurs (GES) ; Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)
- Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
- Actions Concertées Incitatives (ACI) du MENRT "BOQUANI", "INTRANIT" et "NANILUB".
- Axel Hoffmann
- European Project: HPRN-CT-1999- 00132,CLERMONT
Description
Piezoelectric effects on the optical properties of GaN/AlN quantum dots have been investigated by both continuous-wave and time-resolved photoluminescence (TRPL) measurements. The increase in excitation density in CW-PL leads to a blue shift of the transition energy. The TRPL measurements reveal a very large blue-shift (0.6 eV) of the PL peak energy, which reduces with time delay in a complex way, due to the strong transition-energy dependence of the carrier recombination time. The results are discussed in terms of respective roles played by the population of excited levels and by the screening of internal electric fields by accumulation of electron-hole dipoles in the quantum boxes. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Abstract
International audienceAdditional details
Identifiers
- URL
- https://hal.archives-ouvertes.fr/hal-00543736
- URN
- urn:oai:HAL:hal-00543736v1
Origin repository
- Origin repository
- UNICA