Criterion for SEU Occurrence in SRAM Deduced From Circuit and Device Simulations in Case of Neutron-Induced SER

Creators: Mérelle, T.; Chabane, H.; Palau, J.-M.; Castellani-Coulié, K.; Wrobel, Frédéric; Saigné, Frédéric; Sagnes, B.; Boch, J.; Vaillé, J.-R.; Gasiot, J.; Roche, P.; Palau, M.-C.; Carrière, T.

Others:: Centre d'Electronique et de Micro-optoélectronique de Montpellier (CEM2) ; Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS); LPES - Laboratoire de Physique Electronique des Solides, EA 1174 ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA); STMicroelectronics [Crolles] (ST-CROLLES); EADS, Corporate Research Center ; EADS Paris

Description

A reliable criterion for SEU occurrence simulation is presented. It expresses the relationship existing at threshold between the magnitude and duration of the ion-induced parasitic pulse. This criterion can be obtained byboth three-dimensional device and SPICE simulations. Using this criterion, the simulated and experimental SER on 130 and 250 nm technologies are shown to be in good agreement.

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Criterion for SEU Occurrence in SRAM Deduced From Circuit and Device Simulations in Case of Neutron-Induced SER

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