A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures

Description

A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures Broadband ultraviolet (UV) emission has been achieved from the GaN quantum dots grown on diff erent facets of hexagonal truncated pyramidal structures. The GaN-based structures include both semipolar and polar facets, on which the intrinsic piezoelectric fi elds and the growth rates are diff erent. In addition, a strain is locally suppressed at the boundaries of the truncated pyramid structure. As a result, the emission wavelength of quantum dots on various facets and boundaries becomes quite diff erent, rendering a solid-state broadband UV light source with homogenerous intensity in a wide wavelength range.

Abstract

International audience

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