Laser emission with excitonic gain in a ZnO planar microcavity

Creators: Guillet, Thierry; Brimont, Christelle; Valvin, Pierre; Gil, Bernard; Bretagnon, Thierry; Medard, F.; Mihailovic, Martine; Zúñiga-Pérez, Jesús; Leroux, Mathieu; Semond, F.; Bouchoule, Sophie

Others:: Laboratoire Charles Coulomb (L2C) ; Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS); Laboratoire des sciences et matériaux pour l'électronique et d'automatique (LASMEA) ; Université Blaise Pascal - Clermont-Ferrand 2 (UBP)-Centre National de la Recherche Scientifique (CNRS); Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA); Laboratoire de photonique et de nanostructures (LPN) ; Centre National de la Recherche Scientifique (CNRS); ANR-06-BLAN-0135,ZOOM,Zinc Oxide Optical Microcavities(2006); European Project: 235114,EC:FP7:PEOPLE,FP7-PEOPLE-ITN-2008,CLERMONT4(2009)

Description

The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.

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Laser emission with excitonic gain in a ZnO planar microcavity

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