Published August 1, 2020
| Version v1
Journal article
Monolithic integration of ultraviolet microdisk lasers into photonic circuits in a III-nitride-on-silicon platform
Contributors
Others:
- Centre de Nanosciences et de Nanotechnologies (C2N) ; Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
- Institut de Recherche Interdisciplinaire de Grenoble (IRIG) ; Direction de Recherche Fondamentale (CEA) (DRF (CEA)) ; Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
- Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
- Laboratoire Charles Coulomb (L2C) ; Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Description
Ultraviolet microdisk lasers are integrated monolithi-cally into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley waveguide terminated by out-coupling gratings. We measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 nm to 399 nm under pulsed excitation, achieving low threshold energies of 0.14 mJ/cm 2 per pulse (threshold peak powers of 35 kW/cm 2). A large peak to background dynamic of around 200 is observed at the out-coupling grating for small gaps of 50 nm between the disk and waveguide. These devices operate at the limit of what can be achieved with GaN in terms of operation wavelength.
Abstract
International audienceAdditional details
Identifiers
- URL
- https://hal.archives-ouvertes.fr/hal-02908380
- URN
- urn:oai:HAL:hal-02908380v1
Origin repository
- Origin repository
- UNICA