Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics

Description

We report on the impact of structural defects on mid-infrared intersubband (ISB) properties of GaN/(Al, Ga)N heterostructures grown by ammonia molecular beam epitaxy (NH 3 MBE). Twenty-period GaN/(Al, Ga)N multi-quantum-well (MQW) heterostructures are grown on co-loaded a-plane freestanding GaN substrates and heteroepitaxial a-plane GaN on r-plane sapphire templates (a-GaN/r-sap) for three different quantum-well (QW) widths (3.0, 3.3, and 3.7 nm). Co-loaded structures grown on freestanding a-plane with no basal-plane stacking faults (BSFs), prismatic stacking faults (PSFs), and partial dislocations (PDs), with low threading dislocation (TD) densities of about 10 5 cm −2 are compared with those grown on a-GaN templates on (1012) r-sapphire with BSF, PSF, PD, and TD densities of about 4 × 10 5 to 10 6 cm −2 , 5 × 10 3 to 2 × 10 4 cm −2 , about 9 × 10 10 to 2 × 10 11 cm −2 , and about 10 10 cm −2 , respectively. Fourier-transform infrared absorption spectroscopy indicates ISB transition energies in the range of about 250-300 meV (wavelength range 4.1-4.8 µm) for MQWs with different QW widths. The ISB absorption spectra indicate about 5% smaller transition energies and only about 10%-20% larger spectral linewidths for structures grown on a-GaN/r-sapphire templates compared with those on freestanding GaN substrates. The strong defect tolerance in the nonpolar a-plane ISB structures could be due to the nature of defects and their energy levels with respect to the conduction-band minima, which do not affect the ISB properties. Our results pave the way toward the production of low-cost scalable nonpolar III-nitride MQW heterostructures for a variety of passive and active optical materials and devices based on intersubband transitions.

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