Published June 10, 2024
| Version v1
Conference paper
Evaluation of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy
Description
In this work, ammonia source molecular beam epitaxy is explored as an alternative technique to grow ScAlN/GaN High Electron Mobility Transistor heterostructures. The effect of growth temperature and ScAlN barrier thickness on 2dimensional electron gas density is investigated with capacitancevoltage measurements. A transistor with a maximum drain current superior to 1 A/mm has been fabricated on Silicon substrate despite the ohmic contacts present a resistance around 1 ohm.mm, and functional transistors with barriers as thin as 5 nm have been demonstrated.
Abstract
International audienceAdditional details
Identifiers
- URL
- https://hal.science/hal-04793343
- URN
- urn:oai:HAL:hal-04793343v1
Origin repository
- Origin repository
- UNICA