Published September 19, 2010
| Version v1
Conference paper
High quality factor of AlN microdisks embedding GaN quantum dots
Contributors
Others:
- Groupe d'étude des semiconducteurs (GES) ; Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)
- Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS) ; COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
- Institut d'électronique fondamentale (IEF) ; Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)
Description
We report the observation of high quality (Q) factor whispering gallery modes for GaN/AlN quantum dot based microdisks. Room temperature photoluminescence measurements show a large number of high Q modes on the whole PL spectral range. For the first time we report Q values up to 6000 for nitride based cavities. We attribute this improvement of the Q factor to the etching quality and to the relatively low cavity loss by inserting dots into the microdisks. The uniformity of the resonant modes with respect to a wide range of energies allows us to identify the different radial mode families.
Abstract
International audienceAdditional details
Identifiers
- URL
- https://hal.archives-ouvertes.fr/hal-00633272
- URN
- urn:oai:HAL:hal-00633272v1
Origin repository
- Origin repository
- UNICA