Published February 20, 2025
| Version v1
Conference paper
A Comparison Study of Substrates Quality for GaN Vertical Devices
Contributors
Others:
- GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN) ; Université de Tours (UT)-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL) ; Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)
- Istituto per La Microelettronica e Microsistemi- Consiglio Nazionale Delle Ricerche (IMM-CNR), Catania
- Institute of High Pressure Physics [Warsaw] (IHPP) ; Polska Akademia Nauk = Polish Academy of Sciences = Académie polonaise des sciences (PAN)
- Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) ; Université Nice Sophia Antipolis (1965 - 2019) (UNS)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UniCA)
- European Project: 101007310,GaN4AP
- European Project: 101007310,GaN4AP
Description
In this work, a comparison study of four different freestanding GaN substrates is performed by Deep-Level Transient Spectroscopy (DLTS) on Schottky diodes. Three defects are clearly identified, E1 (ET = 0.08-0.14 eV), E2(ET = 0.55-0.60 eV) and E3 (ET = 0.86-0.91 eV). Comparing the concentration for the different substrates reveals the absence of E3 trap and a lower concentration of E2 trap for the epilayer on the substrate grown within GaN4AP consortium by the ammonothermal technique.
Abstract
International audienceAdditional details
Identifiers
- URL
- https://hal.science/hal-04988232
- URN
- urn:oai:HAL:hal-04988232v1
Origin repository
- Origin repository
- UNICA